Irf822fi
WebSTMicroelectronics's IRF822FI is trans mosfet n-ch 500v 1.9a 3-pin(3+tab) to-220 in the fet transistors, mosfets category. Check part details, parametric & specs and download pdf … WebThe LM324 is a low-cost, quad operational amplifier (op-amp) integrated circuit (IC) that is widely used in electronic circuits. It was first introduced by Texas Instruments in 1972 and has since become a popular choice for a variety of applications.
Irf822fi
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Webesh1pc-e3/84a flc01-200 grm1886r1h1r2cz01d grm219r71h273ja01d irf822fi je1xn-dc12v-h ll4148-7 lm2937esx-15 lt1133acsw lt3782efe#pbf m-fiam5ms1 max3376eeka-t mig200j101h mmf400d170b2b n1200ch38koo n350ch12 n740ch18 op2177armz-reel7 p0273sc10e pi3b16215b pse2425u-r+l227hu+q30 s-l2980a sdr1005-470kl skkt19/14e … Webthe IRF822FI is a power MOS transistor preferred for: converters, high current app., high speed switching, motor control, chopper regulators, industrial & consumer environment, …
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WebIRF822FI ,N-channel enhancement mode power MOS transistor, 500V, 1.9AABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF 820 822 820FI 822Fl Vos Drain … WebMaximum Power Dissipation (Pd): 74 W Maximum Drain-Source Voltage Vds : 500 V Maximum Gate-Source Voltage Vgs : 30 V Maximum Gate-Threshold Voltage Vgs (th) : 4.5 V Maximum Drain Current Id : 5 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 24 (max) nC Rise Time (tr): 21 nS Drain-Source Capacitance (Cd): 93 pF
WebPart: IRF822FI: Category: Description: N-channel Enhancement Mode Power MOS Transistor, 500V, 1.9A: Company: ST Microelectronics, Inc. Cross ref. Similar parts: IRFS820B
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